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Characterization of Ti schottky diodes on epi-regrown 4H-SiC

✍ Scribed by Lin Zhu; Canhua Li; T. Paul Chow; Ishwara B. Bhat; Kenneth A. Jones; C. Scozzie; Anant Agarwal

Book ID: 107453644
Publisher: Springer US
Year: 2006
Tongue: English
Weight: 133 KB
Volume: 35
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-006-0134-9

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Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for