Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for
β¦ LIBER β¦
Angle resolved IBIC analysis of 4H-SiC Schottky diodes
β Scribed by A. Lo Giudice; Y. Garino; C. Manfredotti; V. Rigato; E. Vittone
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 258 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0168-583X
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