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Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes

✍ Scribed by C.F. Pirri; S. Ferrero; L. Scaltrito; D. Perrone; S. Guastella; M. Furno; G. Richieri; L. Merlin

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 158 KB
Volume: 83
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.10.031

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