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Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

✍ Scribed by Fortunato Pezzimenti; Francesco G. Della Corte; Roberta Nipoti

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
431 KB
Volume
39
Category
Article
ISSN
0026-2692

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