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Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

✍ Scribed by Francesco G. Della Corte; Fortunato Pezzimenti; Roberta Nipoti


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
225 KB
Volume
38
Category
Article
ISSN
0026-2692

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