Temperature dependent IBIC study of 4HβS
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E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Gar
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Article
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2005
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Elsevier Science
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English
β 395 KB
Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for