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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

✍ Scribed by Martens, K.; Chi On Chui; Brammertz, G.; De Jaeger, B.; Kuzum, D.; Meuris, M.; Heyns, M.; Krishnamohan, T.; Saraswat, K.; Maes, H.E.; Groeseneken, G.

Book ID: 114619063
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 481 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.912365

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