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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - The effect of different passivations on near interface trap density of 4H-SiC/SiO2 structures

✍ Scribed by Salemi, S.; Akturk, A.; Potbhare, S.; Lelis, A.; Goldsman, N.

Book ID: 118173615
Publisher: IEEE
Year: 2011
Weight: 106 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135305

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