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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Analytical model for ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

✍ Scribed by Wang, S. G.; Zhang, Z. Y.

Book ID: 118009650
Publisher: IEEE
Year: 2011
Weight: 214 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135208

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