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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Using triangular voltage sweep to detect mobile ions in silicon carbide MOS

✍ Scribed by Habersat, Daniel B.; Lelis, Aivars; Green, Ronald

Book ID: 118173614
Publisher: IEEE
Year: 2011
Weight: 727 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135140

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