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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Finite element modeling of current-induced filaments in nanocrystalline silicon

✍ Scribed by Fischer, S.; Osorio, C.; Williams, N.; Silva, H.; Gokirmak, A.

Book ID: 118124480
Publisher: IEEE
Year: 2011
Weight: 796 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135194

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