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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Gate-induced drain leakage current of MOSFET with junction doping dependence

✍ Scribed by Park, Hyunho; Choi, Byoungdeog

Book ID: 118270492
Publisher: IEEE
Year: 2011
Weight: 191 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135291

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