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On the analysis of pulsed MOS capacitance measurement

✍ Scribed by K.S. Rabbani; D.R. Lamb


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
290 KB
Volume
21
Category
Article
ISSN
0038-1101

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C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either