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Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers

✍ Scribed by C.H. Ling; T.M. Tay

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
683 KB
Volume
59
Category
Article
ISSN
0169-4332

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Improvement of oxide thickness determina
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It is well known that capacitance-voltage (C2V) measurements provide a simple determination of oxide thickness, but with the scaling down of components the classical method is not appropriated any more. We have observed that for two devices with the same oxide thickness and different surfaces, the c