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Capacitance measurements on SiC MOS structures for the determination of interface properties

✍ Scribed by Mahdad Sadeghi; Olof Engström

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
284 KB
Volume
36
Category
Article
ISSN
0167-9317

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✦ Synopsis

C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either thermal-or non-thermal equilibrium behaviour. Times needed to approach thermal equilibrium may be of the same order or much longer than times spent on the measurement procedure.

In the present paper we give a simple model of the interface charge carrier dynamics for the interpretation of measurement data from 6H-SiC MOS structures and demonstrate how high frequency C-V data can be used to assess the oxide-SiC interface. However a quantitative analysis of data is yet difficult because of the influence of the measurements themselves on the C-V response of our devices.

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✍ L. Soliman; E. Duval; M. Benzohra; E. Lheurette; K. Ketata; M. Ketata 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 111 KB

It is well known that capacitance-voltage (C2V) measurements provide a simple determination of oxide thickness, but with the scaling down of components the classical method is not appropriated any more. We have observed that for two devices with the same oxide thickness and different surfaces, the c