Capacitance measurements on SiC MOS stru
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Mahdad Sadeghi; Olof EngstrΓΆm
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Article
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1997
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Elsevier Science
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English
β 284 KB
C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either