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On RTA-Indueed Deep Levels in Silicon P+N-Diodes

โœ Scribed by Schmalz, K. ;Gdanitz, H. ;Morgenstern, G. ;Tittelbach-Helmrich, K.


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
751 KB
Volume
128
Category
Article
ISSN
0031-8965

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Deep level transient spectroscopy signat
โœ E. Pลaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 351 KB

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen