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Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions

✍ Scribed by Kang, Samsoo ;Myles, Charles W.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 148 KB
Volume: 181
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200009)181:1<219::aid-pssa219>3.0.co;2-o

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