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On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method

✍ Scribed by Emelchenko, Gennadi A.; Zhokhov, Andrey A.; Tartakovskii, Ilya I.; Maksimov, Andrey A.; Steinman, Edward A.


Book ID
120917019
Publisher
Trans Tech Publications, Ltd.
Year
2013
Tongue
English
Weight
728 KB
Volume
740-742
Category
Article
ISSN
1662-9752

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## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found