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The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method

✍ Scribed by Yeo, Im Gyu; Lee, Tae Woo; Park, Jong Hwi; Yang, Woo Sung; Ryu, Heui Bum; Park, Mi Seon; Kim, Il Soo; Shin, Byoung Chul; Lee, Won Jae; Eun, Tai Hee; Lee, Seung Seok; Chun, Myong Chuel

Book ID: 121184297
Publisher: Trans Tech Publications, Ltd.
Year: 2011
Tongue: English
Weight: 407 KB
Volume: 679-680
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.679-680.40

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