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Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

✍ Scribed by Choi, Jung Woo; Son, Chang Hyun; Choi, Jong Mun; Lee, Gi Sub; Lee, Won Jae; Kim, Il Soo; Shin, Byoung Chul; Ku, Kap Ryeol

Book ID
120791271
Publisher
Trans Tech Publications, Ltd.
Year
2009
Tongue
English
Weight
668 KB
Volume
615-617
Category
Article
ISSN
1662-9752

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## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found