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Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

✍ Scribed by Yeo, Im Gyu; Lee, Tae Woo; Park, Jong Hwi; Yang, Woo Sung; Ryu, Heui Bum; Park, Mi Seon; Kim, Il Soo; Shin, Byoung Chul; Lee, Won Jae; Eun, Tai Hee; Lee, Seung Seok; Chun, Myong Chuel

Book ID: 121184298
Publisher: Trans Tech Publications, Ltd.
Year: 2011
Tongue: English
Weight: 353 KB
Volume: 679-680
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.679-680.44

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## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found