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On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor

โœ Scribed by Tsung-Han Tsai; Huey-Ing Chen; Kun-Wei Lin; Yaw-Wen Kuo; Po-Shun Chiu; Chung-Fu Chang; Li-Yang Chen; Tzu-Pin Chen; Yi-Jung Liu; Wen-Chau Liu


Book ID
108265140
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
926 KB
Volume
139
Category
Article
ISSN
0925-4005

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## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov