𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

✍ Scribed by Ching-Wen Hung; Han-Lien Lin; Huey-Ing Chen; Yan-Ying Tsai; Po-Hsien Lai; Ssu-I Fu; Hung-Ming Chuang; Wen-Chau Liu

Book ID
108263680
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
399 KB
Volume
122
Category
Article
ISSN
0925-4005

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Yield sensitivity study of A1GaAs/GaAs h
Yield sensitivity study of A1GaAs/GaAs high electron mobility transistor
✍ Sarker, Jogendra C. ;Purviance, John E. 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 1003 KB

## Abstract A simple graphical statistical method is presented and is used to study the statistical sensitivity of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT) small‐signal performances to physical model parameters, Using an analytical model and applying numerical techniques, the small‐