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O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures

✍ Scribed by Devine, R. A. B.; Mathiot, D.; Warren, W. L.; Aspar, B.


Book ID
111876184
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
409 KB
Volume
79
Category
Article
ISSN
0021-8979

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Inversion electron mobility in Siβˆ’SiO2 s
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By measuring the inversion currents, two types of Si-Si02 structure are studied with the silicon dioxide grown in dry oxygen (H20 below 1 ppm) at two temperatures (850~ and 1050~ Inversion electron mobility and charges at the Si-SiO2 interface for both types of oxide are strongly influenced by the o