Inversion electron mobility in Si−SiO2 structures oxidized at low and high temperatures

✍ Scribed by J. Kassabov; D. Dimitrov; J. Koprinarova

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 624 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(86)80132-x

✦ Synopsis

By measuring the inversion currents, two types of Si-Si02 structure are studied with the silicon dioxide grown in dry oxygen (H20 below 1 ppm) at two temperatures (850~ and 1050~ Inversion electron mobility and charges at the Si-SiO2 interface for both types of oxide are strongly influenced by the oxidation temperature. The degrading effect of low temperature oxidation is explained by a higher level of strain at the Si-SiO2 interface. It is shown that the low temperature post-oxidation N2 anneal is insufficient and the electrical properties of low temperature oxide samples are inferior to those of the high temperature oxides.