Inversion electron mobility in Si-SiO2 structures oxidized at low and high temperatures : J. Kassabov, D. Dimitrov and J. Koprinarova. Microelectron. J.17(5), (1986)

Inversion electron mobility in Si−SiO2 s

Inversion electron mobility in Si−SiO2 structures oxidized at low and high temperatures

✍ J. Kassabov; D. Dimitrov; J. Koprinarova 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 624 KB

By measuring the inversion currents, two types of Si-Si02 structure are studied with the silicon dioxide grown in dry oxygen (H20 below 1 ppm) at two temperatures (850~ and 1050~ Inversion electron mobility and charges at the Si-SiO2 interface for both types of oxide are strongly influenced by the o