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Many-body effects and the electron mobility in Si inversion layers at room temperature

✍ Scribed by K. Nakamura; K. Watanabe; H. Ezawa

Publisher
Elsevier Science
Year
1980
Weight
51 KB
Volume
98
Category
Article
ISSN
0167-2584

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By measuring the inversion currents, two types of Si-Si02 structure are studied with the silicon dioxide grown in dry oxygen (H20 below 1 ppm) at two temperatures (850~ and 1050~ Inversion electron mobility and charges at the Si-SiO2 interface for both types of oxide are strongly influenced by the o