Low-temperature treatment of Si/SiO2 str
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A Szekeres; S Alexandrova
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Article
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1996
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Elsevier Science
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English
⚖ 500 KB
SVSiO, srructures formed by thermal oxidation of n-type (1 IllSi and treated in an RF hydrogen plasma at temperatures ranging from 20 to 300°C were investigated. The plasma exposure led to annealing of postoxidation defects related to fixed positive oxide charges and interface stares but created int