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Low-Temperature RF Plasma Treatment of SiSiO2 Structures as a Substitution for High-Temperature Anneals

✍ Scribed by Alexandrova, S. ;Szekeres, A.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
413 KB
Volume
96
Category
Article
ISSN
0031-8965

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Low-temperature treatment of Si/SiO2 str
✍ A Szekeres; S Alexandrova 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 500 KB

SVSiO, srructures formed by thermal oxidation of n-type (1 IllSi and treated in an RF hydrogen plasma at temperatures ranging from 20 to 300°C were investigated. The plasma exposure led to annealing of postoxidation defects related to fixed positive oxide charges and interface stares but created int