Low-temperature treatment of Si/SiO2 structures in an RF hydrogen plasma

✍ Scribed by A Szekeres; S Alexandrova

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 500 KB
• Volume: 47
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(96)00175-3

✦ Synopsis

SVSiO, srructures formed by thermal oxidation of n-type (1 IllSi and treated in an RF hydrogen plasma at temperatures ranging from 20 to 300°C were investigated. The plasma exposure led to annealing of postoxidation defects related to fixed positive oxide charges and interface stares but created interface traps at both sides of the WSiO, interface. The processes were temperature dependent, with the density of postoxidation and radiation-induced defects decreasing as the treatment temperature increased. Hydrogen species also participated in these processes.