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Manifestation of Hydrogen in Al-SiO2-Si Structures Subjected to a RF Plasma Annealing

✍ Scribed by Lysenko, V. S. ;Nazarov, A. N. ;Naumovets, G. A. ;Popov, V. B. ;Tkachenko, A. S.


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
187 KB
Volume
112
Category
Article
ISSN
0031-8965

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SVSiO, srructures formed by thermal oxidation of n-type (1 IllSi and treated in an RF hydrogen plasma at temperatures ranging from 20 to 300Β°C were investigated. The plasma exposure led to annealing of postoxidation defects related to fixed positive oxide charges and interface stares but created int