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(Me5C5)SiH3 and (Me5C5)2SiH2 as precursors for low-temperature remote plasma-enhanced CVD of thin Si3N4 and SiO2 films

✍ Scribed by Jürgen Dahlhaus; Prof. Peter Jutzi; Dr. Hubert-Joachim Frenck; Dr. Wilhelm Kulisch


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
469 KB
Volume
5
Category
Article
ISSN
0935-9648

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