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Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

โœ Scribed by Gaucci, P.; Valletta, A.; Mariucci, L.; Fortunato, G.; Brotherton, S.D.


Book ID
114618131
Publisher
IEEE
Year
2006
Tongue
English
Weight
256 KB
Volume
53
Category
Article
ISSN
0018-9383

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Numerical simulation of radiation damage
โœ M. Petasecca; F. Moscatelli; D. Passeri; G.U. Pignatel; C. Scarpello ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 158 KB

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon,