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Effect of the active layer thickness on the leakage current in p+p p+ accumulation polycrystalline silicon TFTs

โœ Scribed by H. Sehil; F. Raoult; Y. Colin; O. Bonnaud


Book ID
113300251
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
609 KB
Volume
34
Category
Article
ISSN
0254-0584

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