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The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing

✍ Scribed by Shin-Hee Han; Il-Suk Kang; Nam-Kyu Song; Min-Sun Kim; Jang-Sik Lee; Seung-Ki Joo

Book ID: 114618844
Publisher: IEEE
Year: 2007
Tongue: English
Weight: 277 KB
Volume: 54
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.901880

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