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Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

✍ Scribed by Chen Yu-Zhang; Tang Ting-Wei


Book ID
114538349
Publisher
IEEE
Year
1988
Tongue
English
Weight
743 KB
Volume
35
Category
Article
ISSN
0018-9383

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In this paper, we investigate the gate current of scaled floating gate MOSFETs at low drain voltage ( VDS << 3 V) over a broad range of gate voltages. It is shown that under suitable bias conditions, as those typically encountered while reading the data of non-volatile memory cells, the gate current