Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs

✍ Scribed by Luca Selmi; Andrea Ghetti; Roberto Bez; Enrico Sangiorgi

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 248 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00065-8

✦ Synopsis

In this paper, we investigate the gate current of scaled floating gate MOSFETs at low drain voltage ( VDS << 3 V) over a broad range of gate voltages. It is shown that under suitable bias conditions, as those typically encountered while reading the data of non-volatile memory cells, the gate current can be explained as a hybrid tunneling/hotcarrier injection regime.