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Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

✍ Scribed by Selmi, L.; Menozzi, R.; Gandolfi, P.; Ricco, B.

Book ID: 114534710
Publisher: IEEE
Year: 1992
Tongue: English
Weight: 604 KB
Volume: 39
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.155872

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