✦ LIBER ✦

Nucleation of point defects in low-fluence ion-implanted GaAs and GaP

✍ Scribed by W. Wesch; E. Wendler; K. Gärtner

Book ID: 113282648
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 417 KB
Volume: 63
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(92)95167-p

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect production in ion implanted GaAs,

Defect production in ion implanted GaAs, GaP and InP

✍ E. Wendler; W. Wesch; G. Götz 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 499 KB

Annealing studies of point defects in lo

Annealing studies of point defects in low dose MeV ion implanted silicon

✍ J. Lalita; B.G. Svensson; C. Jagadish; A. Hallén 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 508 KB

Defects in H implanted GaAs studied by i

Defects in H implanted GaAs studied by ion-beam and low-energy positron techniques

✍ J. Keinonen; E. Rauhala; J. Räisänen; K. Saarinen; P. Hautojärvi; C. Corbel 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 260 KB

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 × 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa

Observation of unequal densities for sul

Observation of unequal densities for sulfur defects in silicon predeposited by low fluence ion implantation*

✍ D. R. Myers; W. E. Phillips 📂 Article 📅 1979 🏛 Springer US 🌐 English ⚖ 264 KB

Sub-gap absorption study of defects in i

Sub-gap absorption study of defects in ion-implanted and annealed Si layers

✍ L. Luciani; U. Zammit; M. Marinelli; R. Pizzoferrato 📂 Article 📅 1990 🏛 Springer 🌐 English ⚖ 630 KB

Luminescence of Pr, Nd and Yb ions impla

Luminescence of Pr, Nd and Yb ions implanted in GaAs and GaP

✍ N. A. Rzakuliev; V. M. Konnov; V. N. Yakimkin; V. V. Ushakov; A. A. Gippius; J. 📂 Article 📅 1988 🏛 Springer 🌐 English ⚖ 265 KB