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Annealing studies of point defects in low dose MeV ion implanted silicon

✍ Scribed by J. Lalita; B.G. Svensson; C. Jagadish; A. Hallén


Book ID
114168939
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
508 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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Annealing studies of cluster defects in
✍ M.A. Gad; J.H. Evans-Freeman 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 166 KB

High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 • 10 10 cm À2 . The low dose ens