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Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxy

✍ Scribed by Kato, Manabu; Sato, Taketoshi; Murota, Junichi; Mikoshiba, Nobuo

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
579 KB
Volume
99
Category
Article
ISSN
0022-0248

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## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly