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Nucleation and growth of anodic oxide films on bismuth—II

✍ Scribed by D.E. Williams; G.A. Wright

Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
776 KB
Volume
22
Category
Article
ISSN
0013-4686

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✦ Synopsis

The rate of nucleation of the anodic oxide film on bismuth in 0.1 M NaOH is limited hy electrochemical reaction at the uncovered metal surface or surface diffusion to the periphery of a spreading oxide patch, not by incorporation into the growing lattice. Anodic oxide layers grown on bismuth consist of a thin barrier layer overlaid by a much thicker cracked and porous layer. Discrepancies between previous workers are thus resolved. The growth kinetics of the barrier layer are satisfactorily described by the simple model of high field ion transport. Galvanostatic and potentiostatic techniques, and microscopic examination of the metal surface, including scanning electron microscopy, were employed.

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