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Structure and electronic properties of bismuth anodic oxide films—II. Galvanostatic transients

✍ Scribed by D.E. Williams

Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
747 KB
Volume
27
Category
Article
ISSN
0013-4686

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✦ Synopsis

The transient poten+ response to a step chaage in current of both freshly prcpamd and aged bismuth ano& oxW films indxzted that the anodic 6lm had a non-stoichbamtric laya at the film-metal interfaa, the response rel%&ing the relaxation of sv charges of trapped electrons aad mobile ions. The idea is that the snodic oxide is extremely defective, haviag within the Wad gap a large nww of trapping states which come into electronic equilibrium with the a&al. As a colwcqtlcllct of the r&lag el&troaic space charge, a positive space charge of mobile ions develops. The positivd spaa charge cati pmvidc even more trapping states so the two charges can be couplal together in a subtle f&kiOn. The transients fdkt the different relax&m times and the coupling of these two charges. Theories of the gal-& Wan&&t response of auodii oxide films to be fpund in the literature which postulate ehborntions of ths IdgMeldion transport process were less rrucc*aspul &an the simple ideas developed here; however simple i&as do seem to relate to the aiore elaborate theories in a fairly straightforward f&&on, aad seem to provide a more wnable physical basis for these theories than has been previously postulated.

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It has been shown previously that the kinetics of anodic film growth on Ta, Nb and Zr often depend strongly on the nature of the electrolyte. This work is an attempt to resolve this anomaly and the inconsistencies in the reported structures of the oxide layers. Electron diffraction showed the anodic