## Abstract SIMS relative sensitivity factors and detection limits are reported for seventeen elements in epitaxially‐grown ZnSe on GaAs, using oxygen and cesium primary ion beams. Analytical considerations necessary for obtaining the lowest detection limits are discussed.
Noval detection scheme for the analysis of hydrogen and helium by secondary ion mass spectrometry
✍ Scribed by H. Gnaser; H. Oechsner
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 289 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Abstract
For the analysis of hydrogen and helium in solids and thin films by secondary ion mass spectrometry, the use of Cs^+^ primary ions in conjunction with the detection of HCs^+^ and HeCs^+^ molecular ions is proposed. For both species, detection limits of the order of 10^19^ atoms cm^−3^ are obtained at sputter removal retes of ∼1 nm s^−1^. A relative depth resolution of ∼2% is demonstrated for hydrogenated amorphous Is layers on single‐crystal Si. In these specimens, the HCs^+^ intensities scale linearly with the hydrogen concentrations c~H~ in the range investigated (c~H~ < 20at.%); hence, a quantitative evaluation of the H content appears possible by means of a single standard.
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