The migration of hydrogen in metals plays an important role in many fields of science and technology. Secondary ion mass spectrometry (SIMS) is a suitable method for analysis of hydrogen in solids, but there are still unsolved problems (sputter enhanced migration, stable reference materials for quan
β¦ LIBER β¦
Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometry
β Scribed by Charles Magee; David E. Carlson
- Publisher
- Elsevier Science
- Year
- 1980
- Weight
- 634 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0379-6787
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