In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for dif
โฆ LIBER โฆ
Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design
โ Scribed by Cabral, P.M.; Pedro, J.C.; Carvalho, N.B.
- Book ID
- 114660125
- Publisher
- IEEE
- Year
- 2004
- Tongue
- English
- Weight
- 702 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9480
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