A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The
โฆ LIBER โฆ
Analytical Model for Power Switching GaN-Based HEMT Design
โ Scribed by Esposto, M.; Chini, A.; Rajan, S.
- Book ID
- 114620409
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 238 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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