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Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design

โœ Scribed by Anwar Jarndal; Pouya Aflaki; Louay Degachi; Ahmed Birafane; Ammar Kouki; Renato Negra; Fadhel M. Ghannouchi


Book ID
108271792
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
942 KB
Volume
54
Category
Article
ISSN
0038-1101

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Large-signal modeling methodology for Ga
โœ Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 466 KB

A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The