Large-signal modeling methodology for Ga
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Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi
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Article
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2010
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John Wiley and Sons
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English
โ 466 KB
A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The