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Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers

✍ Scribed by Jarndal, A.; Markos, A.Z.; Kompa, G.

Book ID: 114661340
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 845 KB
Volume: 59
Category: Article
ISSN: 0018-9480
DOI: 10.1109/tmtt.2010.2095034

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