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A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

โœ Scribed by Xu, Yuehang; Fu, Wenli; Wang, Changsi; Ren, Chunjiang; Lu, Haiyan; Zheng, Weibin; Yu, Xuming; Yan, Bo; Xu, Ruimin

Book ID
126515241
Publisher
Taylor and Francis Group
Year
2014
Tongue
English
Weight
362 KB
Volume
28
Category
Article
ISSN
0920-5071

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โœ Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 466 KB

A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The